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Strain mapping in f...
Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires
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- Larsson, Magnus (author)
- Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
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- Wagner, Jakob (author)
- Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
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- Wallin, Mathias (author)
- Lund University,Lunds universitet,Hållfasthetslära,Institutionen för byggvetenskaper,Institutioner vid LTH,Lunds Tekniska Högskola,Solid Mechanics,Department of Construction Sciences,Departments at LTH,Faculty of Engineering, LTH
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- Håkansson, Paul (author)
- Lund University,Lunds universitet,Hållfasthetslära,Institutionen för byggvetenskaper,Institutioner vid LTH,Lunds Tekniska Högskola,Solid Mechanics,Department of Construction Sciences,Departments at LTH,Faculty of Engineering, LTH
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- Fröberg, Linus (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Samuelson, Lars (author)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Wallenberg, Reine (author)
- Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2006-12-08
- 2007
- English.
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In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:1
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Abstract
Subject headings
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- The strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images. We find that nanowires with a diameter of about 20 nm show a 10 nm strained area over the InAs/InP interface and the rest of the wire has a relaxed lattice structure. The lattice parameters and elastic properties for the wurtzite structure of InAs and InP are calculated and a nanowire interface is simulated using finite element calculations. Both the method and the experimental results are validated using a combination of finite element calculations and image simulations.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
Publication and Content Type
- art (subject category)
- ref (subject category)
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