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Search: id:"swepub:oai:research.chalmers.se:088a4a34-bd5c-4070-8a55-8430683965de" > Wideband and effici...

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Wideband and efficient watt-level SiGe BiCMOS switching mode power amplifier using continuous class-E modes theory

ÖZEN, MUSTAFA, 1984 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Acar, M. (author)
Nxp Semiconductors Netherlands Bv
Van Der Heijden, M.P. (author)
Nxp Semiconductors Netherlands Bv
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Apostolidou, M. (author)
Nxp Semiconductors Netherlands Bv
Leenaerts, D.M.W. (author)
Nxp Semiconductors Netherlands Bv
Jos, Hendrikus, 1954 (author)
Chalmers tekniska högskola,Chalmers University of Technology,Nxp Semiconductors Netherlands Bv
Fager, Christian, 1974 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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 (creator_code:org_t)
ISBN 9781479938629
2014
2014
English.
In: Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium. - 1529-2517. - 9781479938629 ; , s. 243-246
  • Conference paper (peer-reviewed)
Abstract Subject headings
Close  
  • In this paper, a generic, wide-band switch mode power amplifier (SMPA) design approach is developed based on the continuous class-E modes theory. A watt level, 1.3-2.2 GHz SiGe BiCMOS class-E SMPA is realized for experimental verification. The prototype provides collector efficiencies higher than 70% and output power levels higher than 29 dBm across 1.3-2.2 GHz band, fully confirming the validity of the proposed design approach.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

wideband
efficiency
class-e
SiGe
CMOS

Publication and Content Type

kon (subject category)
ref (subject category)

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