Electroluminescence from silicon p-n junctions prepared by wafer bonding

Sveinbjörnsson, Einar, 1964 (author): Chalmers tekniska högskola,Chalmers University of Technology

Bengtsson, Stefan, 1961 (author): Chalmers tekniska högskola,Chalmers University of Technology

Weber, J. (author)

Keskitalo, N. (author)

(creator_code:org_t)

1998
1998
English.
In: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 264-

Abstract Subject headings

We report on electro- and photoluminescence from silicon p-n diodes formed by hydrophobic wafer bonding. Four main spectral features associated with the bonded interface are detected at photon energies between 0.8 and 0.9 eV. Two of these signals are identified as the dislocation-related signals D1 and D2 while two peaks at 0.83 eV and 0.89 eV remain unidentified. However, we observe a signal similar to the 0.83 eV signal in polysilicon and at the junction of a silicon bicrystal

TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

By the author/editor: Sveinbjörnsson, ...; Bengtsson, Stefa ...; Weber, J.; Keskitalo, N.

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

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