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MgB2 Hot-Electron Bolometer Mixers at Terahertz Frequencies

Bevilacqua, Stella, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Novoselov, Evgenii, 1988 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Cherednichenko, Serguei, 1970 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Shibata, Hiroyuki (author)
Nippon Telegraph and Telephone Corporation
Tokura, Yasuhiro (author)
Nippon Telegraph and Telephone Corporation
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 (creator_code:org_t)
2015
2015
English.
In: IEEE Transactions on Applied Superconductivity. - 1558-2515 .- 1051-8223. ; 25:3, s. 2301104-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • In this paper, we compare the performance of MgB2 Hot-Electron Bolometer Mixers operating at Local Oscillator frequencies of 0.6 and 1.63 THz. The minimum noise temperatures that were obtained are 700 and 1150 K for 0.6 and 1.63 THz, respectively. The receiver noise bandwidth is of the order of 2.2-3 GHz for 10-nm-thick HEB devices with a Tc of 8.5 K. Sub-micrometer size HEBs were also fabricated with no degradation of the initial film quality when a 20-nm MgB2 film with a Tc of 22 K was used. In the direct detection mode, the maximum voltage responsivity is in the range of 1-2 kV/W at 1.63 THz and the optimal bias current is around 1/4-1/3 of the Ic at 4.2 K.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

hot-electron bolometer
thin film.
terahertz detector
MgB2
HEB mixer

Publication and Content Type

art (subject category)
ref (subject category)

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