Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Bonmann, Marlene, 1988 (author): Chalmers tekniska högskola,Chalmers University of Technology

Vorobiev, Andrei, 1963 (author): Chalmers tekniska högskola,Chalmers University of Technology

Stake, Jan, 1971 (author): Chalmers tekniska högskola,Chalmers University of Technology

Engström, Olof, 1943 (author): Chalmers tekniska högskola,Chalmers University of Technology

(creator_code:org_t)

American Vacuum Society, 2017
2017
English.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. - : American Vacuum Society. - 2166-2754 .- 2166-2746. ; 35:1, s. 01A115-

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Abstract Subject headings

A semiempirical model describing the influence of interface states on characteristics of gatecapacitance and drain resistance versus gate voltage of top gated graphene field effect transistors ispresented. By fitting our model to measurements of capacitance–voltage characteristics and relatingthe applied gate voltage to the Fermi level position, the interface state density is found. Knowing theinterface state density allows us to fit our model to measured drain resistance–gate voltagecharacteristics. The extracted values of mobility and residual charge carrier concentration arecompared with corresponding results from a commonly accepted model which neglects the effect ofinterface states. The authors show that mobility and residual charge carrier concentration differsignificantly, if interface states are neglected. Furthermore, our approach allows us to investigate indetail how uncertainties in material parameters like the Fermi velocity and contact resistanceinfluence the extracted values of interface state density, mobility, and residual charge carrierconcentration.

TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

By the author/editor: Bonmann, Marlene ...; Vorobiev, Andrei ...; Stake, Jan, 1971; Engström, Olof, ...

About the subject

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

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