Buffer Related Dispersive Effects in Microwave GaN HEMTs

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Fältnamn	Indikatorer	Metadata
000		03647nam a2200385 4500
001		oai:research.chalmers.se:5b0b1d03-fbbb-46f9-933c-0f311278b7d5
003		SwePub
008		180329s2018 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
020		a 9789175977263
024	7	a https://research.chalmers.se/publication/5016172 URI
040		a (SwePub)cth
041		a engb eng
042		9 SwePub
072	7	a dok2 swepub-publicationtype
072	7	a vet2 swepub-contenttype
100	1	a Bergsten, Johanu Chalmers tekniska högskola,Chalmers University of Technology4 aut
245	1 0	a Buffer Related Dispersive Effects in Microwave GaN HEMTs
264	1	a Gothenburg,c 2018
338		a electronic2 rdacarrier
520		a In applications such as mobile communication and radar, microwave power generation at high frequency is of utmost importance. The GaN HEMT offers a unique set of properties that makes it suitable for high power amplification at high frequencies. However, their performance is limited by trap states, leading to reduced output power and time variant effects. Furthermore, for good high frequency performance a high efficiency it is essential to limit the access resistances in the transistor. The GaN HEMT technology has long lacked a good ohmic contact with good reproducibility. In this thesis, three buffer designs are considered; C-doped GaN, AlGaN back barriers and a thin GaN structure. The three designs are evaluated in terms of trapping effects using the drain current transient technique. For the C-doped GaN buffer, trapping at dislocations covered with C-clusters is believed to be the main factor limiting output power. Dislocations are presumed to play a major role for the trapping behavior of AlGaN back barriers and the thin structure as well. The maximum output powers for C-doped GaN, AlGaN back barriers and the thin structure are 3.3, 2.7, and 3.9 W/mm at 30 GHz. The output power is found to be limited by trapping effects for all buffer designs. Moreover, a Ta-based, recessed ohmic contact enables a contact resistance of down to 0.14 Ωmm. The results also indicate that a highly reproducible process might be possible for deeply recessed contacts. An optimized AlGaN/GaN interface shows high mobility \textgreater2000 cm2/Vs without the use of an AlN-exclusion layer. The improved interface also decreases trapping effects and the gate-source capacitance at large electric fields compared to an unoptimized interface.
650	7	a NATURVETENSKAPx Data- och informationsvetenskapx Datorteknik0 (SwePub)102062 hsv//swe
650	7	a NATURAL SCIENCESx Computer and Information Sciencesx Computer Engineering0 (SwePub)102062 hsv//eng
650	7	a TEKNIK OCH TEKNOLOGIERx Maskinteknikx Rymd- och flygteknik0 (SwePub)203022 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Mechanical Engineeringx Aerospace Engineering0 (SwePub)203022 hsv//eng
650	7	a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng
653		a trapping effects
653		a C-doping
653		a AlGaN/GaN interface quality
653		a recessed ohmic contacts
653		a GaN HEMT
653		a buffer design
710	2	a Chalmers tekniska högskola4 org
856	4	u https://research.chalmers.se/publication/501617/file/501617_Fulltext.pdfx primaryx freey FULLTEXT
856	4 8	u https://research.chalmers.se/publication/501617

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By the author/editor: Bergsten, Johan

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NATURAL SCIENCES: NATURAL SCIENCES; and Computer and Inf ...; and Computer Enginee ...

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Mechanical Engin ...; and Aerospace Engine ...

ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Electrical Engin ...; and Other Electrical ...

By the university: Chalmers University of Technology

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