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Giant quantum Hall plateaus generated by charge transfer in epitaxial graphene

Alexander-Webber, J. A. (author)
University Of Oxford,University Of Cambridge,University of Oxford, England; University of Cambridge, England
Huang, J. (author)
University Of Oxford,University of Oxford, England
Maude, D. K. (author)
Centre national de la recherche scientifique (CNRS),CNRS UGA UPS INSA, France
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Janssen, Tjbm (author)
National Physical Laboratory (NPL),National Phys Lab, England
Tzalenchuk, A.Y. (author)
National Physical Laboratory (NPL),Royal Holloway University of London,National Phys Lab, England; Royal Holloway University of London, England,Chalmers, Sweden
Antonov, V. (author)
Royal Holloway University of London,Royal Holloway University of London, England
Yager, Thomas, 1987 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Lara Avila, Samuel, 1983 (author)
Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
Kubatkin, Sergey, 1959 (author)
Chalmers tekniska högskola,Chalmers University of Technology,Chalmers, Sweden
Yakimova, Rositsa (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
Nicholas, R. J. (author)
University Of Oxford,University of Oxford, England
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 (creator_code:org_t)
2016-07-26
2016
English.
In: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 6
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Epitaxial graphene has proven itself to be the best candidate for quantum electrical resistance standards due to its wide quantum Hall plateaus with exceptionally high breakdown currents. However one key underlying mechanism, a magnetic field dependent charge transfer process, is yet to be fully understood. Here we report measurements of the quantum Hall effect in epitaxial graphene showing the widest quantum Hall plateau observed to date extending over 50 T, attributed to an almost linear increase in carrier density with magnetic field. This behaviour is strong evidence for field dependent charge transfer from charge reservoirs with exceptionally high densities of states in close proximity to the graphene. Using a realistic framework of broadened Landau levels we model the densities of donor states and predict the field dependence of charge transfer in excellent agreement with experimental results, thus providing a guide towards engineering epitaxial graphene for applications such as quantum metrology.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Electronic properties and devices
graphene
Quantum Hall

Publication and Content Type

art (subject category)
ref (subject category)

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