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The influence of gate material, SiO2 fabrication method and gate edge effect on interface trap density in 3C-SiC MOS capcitors
- Gutt, T. (author)
- Malachowski, T. (author)
- Prewlocki, H. M. (author)
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- Bakowski, M. (author)
- Esteve, R. (author)
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- (creator_code:org_t)
- 2012
- 2012
- English.
- In: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 117, s. 109-
- Journal article (peer-reviewed)
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- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
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- Gutt, T.
- Malachowski, T.
- Prewlocki, H. M.
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- ENGINEERING AND TECHNOLOGY
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- Chalmers University of Technology
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