Search: id:"swepub:oai:research.chalmers.se:ddc0b520-a24e-4d22-a221-6741f8edc7e6" >
Polarization-balanc...
Polarization-balanced design of heterostructures: Application to AlN/GaN double-barrier structures
-
- Berland, Kristian, 1983 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Andersson, Thorvald, 1946 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Hyldgaard, Per, 1964 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
(creator_code:org_t)
- 2011
- 2011
- English.
-
In: Physical Review B - Condensed Matter and Materials Physics. - 2469-9950 .- 2469-9969. ; 84:24
- Related links:
-
http://publications.... (primary) (free)
-
show more...
-
https://research.cha...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Inversion and depletion regions generally form at the interfaces between doped leads ( cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitride compounds. The band bending in the depletion region sets up a barrier that may seriously impede perpendicular electronic transport. This may ruin the performance of devices such as quantum-cascade lasers and resonant-tunneling diodes. Here we introduce the concepts of polarization balance and polarization-balanced designs: A structure is polarization balanced when the applied bias match the voltage drop arising from spontaneous and piezeolectric fields. Devices designed to operate at this bias have polarization-balanced designs. These concepts offer a systematic approach to avoid the formation of depletion regions. As a test case, we consider the design of AlN/GaN double-barrier structures with Al((x) over tilde)Ga(1-(x) over tilde)N leads. To guide our efforts, we derive a simple relation between the intrinsic voltage drop arising from polar effects, average alloy composition of the active region, and the alloy concentration of the leads. Polarization-balanced designs secure good filling of the ground state for unbiased structures, while for biased structures with efficient emptying of the active region they remove the depletion barriers.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Annan teknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Other Engineering and Technologies (hsv//eng)
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Kommunikationssystem (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Communication Systems (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- quantum cascade laser
- macroscopic polarization
- semiconductors
- epitaxy
- wells
- mu-m
- gan
- transport
- molecular-beam
- resonant-tunneling diodes
- intersubband absorption
Publication and Content Type
- art (subject category)
- ref (subject category)
Find in a library
To the university's database