NiSi integration in a non-selective base SiGeCHBT process

• A self-aligned nickel silicide (salicide) process is integrated into a non-selective base SiGeC HBT process. The device features a unique, fully silicided base region that grows laterally under the emitter pedestal. This Ni(SiGe) formed in this base region was found to have a resistivity of 23-24 muOmega cm. A difference in the silicide thickness between the boron-doped SiGeC extrinsic base region and the in situ phosphorous-doped emitter region is observed and further analyzed and confirmed with a blanket wafer silicide study. The silicided device exhibited a current gain of 64 and HF device performance of 39 and 32 GHz for f(t) and f(MAX), respectively.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

SiGeCHBT

nickel silicide

silicides

si1-xgex

Publication and Content Type

ref (subject category)

art (subject category)