onr:"swepub:oai:DiVA.org:kth-21259"
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02711naa a2200361 4500 | |
| 001 | oai:DiVA.org:kth-21259 | |
| 003 | SwePub | |
| 008 | 100810s2002 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-212592 URI |
| 024 | 7 | a https://doi.org/10.1016/S0168-583X(01)00879-52 DOI |
| 040 | a (SwePub)kth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Keskitalo, N.4 aut |
| 245 | 1 0 | a Characterization of hydrophobic bonded silicon wafers |
| 264 | 1 | c 2002 |
| 338 | a print2 rdacarrier | |
| 500 | a QC 20100525 | |
| 520 | a Direct bonding of silicon-to-silicon has been recognized as an interesting method for creating novel device geometries and structures and it has so far been used for the preparation of power devices and sensors. The influence of the bonded interface on electrical performance is then of great interest. In this contribution the interface region of hydrophobic bonded n-type silicon wafers have been studied and a comparison is made between samples before and after an exposure to low doses of 9.5 MeV protons to see the effect of the interface on point defect kinetics, The samples were studied using current-voltage (IV), capacitance-voltage (CV). deep level transient spectroscopy (DLTS). secondary ion mass spectrometry (SIMS) and scanning electron microscopy (SEM). During reverse bias there is a dramatic increase in leakage current when the depletion region reaches the bonded interface region. Due to the high leakage currents DLTS measurements could not be performed directly at the interface. However. in contrast to previous studies. no deep levels are discovered in the interface region of non-irradiated samples and, furthermore, no influence of the bonded interface on the concentration and depth distribution of irradiation induced defects could be detected. This suggests that the irradiation induced defects are unaffected by the bonded interlace, At the interface a boron peak is detected by SIMS. | |
| 653 | a deep level | |
| 653 | a bonded interface | |
| 653 | a grain boundary | |
| 653 | a proton-irradiated silicon | |
| 653 | a interface | |
| 653 | a boron | |
| 700 | 1 | a Tiensuu, S.4 aut |
| 700 | 1 | a Hallén, Anders.u KTH,Mikroelektronik och informationsteknik, IMIT4 aut0 (Swepub:kth)u11ywmz1 |
| 710 | 2 | a KTHb Mikroelektronik och informationsteknik, IMIT4 org |
| 773 | 0 | t Nuclear Instruments and Methods in Physics Research Section Bg 186, s. 66-70q 186<66-70x 0168-583Xx 1872-9584 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-21259 |
| 856 | 4 8 | u https://doi.org/10.1016/S0168-583X(01)00879-5 |
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