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- Ekström, MattiasKTH,Elektronik (author)
Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing
- Article/chapterEnglish2018
Publisher, publication year, extent ...
- Trans Tech Publications,2018
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:kth-238393
- https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-238393URI
- https://doi.org/10.4028/www.scientific.net/MSF.924.389DOI
Supplementary language notes
- Language:English
- Summary in:English
Part of subdatabase
- SwePubSwePub
Classification
Notes
- QC 20181108
- Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Annan teknik hsv//swe
- ENGINEERING AND TECHNOLOGY Other Engineering and Technologies hsv//eng
- Ni-Al
- P-type ohmic contact
- Rapid thermal processing (RTP)
- Silicon carbide (4H-SiC)
- Transfer length method (TLM)
Added entries (persons, corporate bodies, meetings, titles ...)
- Hou, ShuobenKTH,Elektronik(Swepub:kth)u1nvrr9i (author)
- Elahipanah, HosseinKTH,Elektronik(Swepub:kth)u1ve1t1u (author)
- Salemi, ArashKTH,Elektronik(Swepub:kth)u14aqahn (author)
- Östling, MikaelKTH,Elektronik(Swepub:kth)u1u0kle4 (author)
- Zetterling, Carl-Mikael,1966-KTH,Elektronik(Swepub:kth)u15o61ns (author)
- KTHElektronik (creator_code:org_t)
Related titles
- In:International Conference on Silicon Carbide and Related Materials, ICSCRM 2017: Trans Tech Publications, s. 389-3929783035711455
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