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Damage recovery in ...
Damage recovery in ZnO by post-implantation annealing
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- Audren, A. (författare)
- Uppsala universitet,Jonfysik
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- Hallén, Anders (författare)
- Uppsala universitet,KTH,Integrerade komponenter och kretsar,Jonfysik
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- Linnarsson, Margareta K. (författare)
- KTH,Integrerade komponenter och kretsar
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- Possnert, Göran (författare)
- Uppsala universitet,Jonfysik
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(creator_code:org_t)
- Elsevier BV, 2010
- 2010
- Engelska.
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 268:11-12, s. 1842-1846
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- ZnO bulk samples were implanted with 200 key-Co ions at room temperature with two fluences, 1 x 10(16) and 8 x 10(16) cm(-2), and then annealed in air for 30 min at different temperatures up to 900 degrees C. After the implantation and each annealing step, the samples were analyzed by Rutherford backscattering spectrometry (RBS) in random and channeling directions to follow the evolution of the disorder profile. The RBS spectra reveal that disorder is created during implantation in proportion to the Co fluence. The thermal treatments induce a disorder recovery, which is however, not complete after annealing at 900 degrees C, where about 15% of the damage remains. To study the Co profile evolution during annealing, the samples were, in addition to RBS, characterized by secondary ion mass spectrometry (SIMS). The results show that Co diffusion starts at 800 degrees C, but also that a very different behavior is seen for Co concentrations below and above the solubility limit. (C) 2010 Elsevier B.V. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Subatomär fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Subatomic Physics (hsv//eng)
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
Nyckelord
- ZnO
- Ion implantation
- RBS/channeling
- SIMS
- Radiation damage
- Dopant diffusion
- Nuclear physics
- Kärnfysik
- Atomic and molecular physics
- Atom- och molekylfysik
- Ion physics
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- art (ämneskategori)
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