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Structure of the wafer fused InP (001)-GaAs (001) interface

Sagalowicz, Laurent (author)
Institut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
Rudra, Alok P. (author)
Institut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
Syrbu, Alexei V. (author)
Institut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
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Behrend, J. (author)
Institut de Micro et Optoelectronique, Département de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne, 1015, Switzerland
Salomonsson, Fredrik (author)
KTH,Elektronik
Streubel, Klauss P. (author)
KTH,Elektronik
Hammar, Mattias, 1961- (author)
KTH,Elektronik
Bentell, Jonas (author)
KTH,Elektronik
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 (creator_code:org_t)
Informa UK Limited, 1997
1997
English.
In: Philosophical Magazine Letters. - : Informa UK Limited. - 0950-0839 .- 1362-3036. ; 76:6, s. 445-452
Related links:
https://urn.kb.se/re...
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https://doi.org/10.1...
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  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A structural study of wafer fused InP-GaAs interfaces has been carried out. The geometry of the dislocation network which accommodates the twist and the lattice mismatch is first given using a geometrical approach. Cross-sectional transmission electron microscopy and plan view observations are presented. Two different misfit cases are observed. (1) When no twist is present, the 3.7% lattice mismatch is relaxed by a regular square network of dislocations with pure edge character. (2) When an additional twist is present, a square network of dislocations results as well but here the dislocations have a mixed character; 60° dislocations are also observed, some form closed defect circuits and others very likely accommodate a small tilt. The interaction between the 60° dislocations and the edge dislocations is explained in detail. Voids or inclusions are also observed as well as additional dislocations which may accommodate part of the thermal mismatch. © 1997 Taylor & Francis Ltd.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Crystal lattices
Crystal orientation
Dislocations (crystals)
Semiconducting gallium arsenide
Semiconducting indium phosphide
Semiconductor device structures
Transmission electron microscopy
Lattice mismatch
Thermal mismatch
Semiconductor junctions

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ref (subject category)
art (subject category)

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