Charge accumulation at InAs surfaces

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Fältnamn	Indikatorer	Metadata
000		01549naa a2200325 4500
001		oai:DiVA.org:kth-84165
003		SwePub
008		120213s1996 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-841652 URI
024	7	a https://doi.org/10.1103/PhysRevLett.76.36262 DOI
040		a (SwePub)kth
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a art2 swepub-publicationtype
100	1	a Olsson, L O4 aut
245	1 0	a Charge accumulation at InAs surfaces
264	1	c 1996
338		a print2 rdacarrier
500		a NR 20140805
520		a Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.
700	1	a Andersson, C B M4 aut
700	1	a Hakansson, M C4 aut
700	1	a Kanski, J4 aut
700	1	a Ilver, L4 aut
700	1	a Karlsson, Ulf Ou materialfysik4 aut
710	2	a materialfysik4 org
773	0	t Physical Review Lettersg 76:19, s. 3626-3629q 76:19<3626-3629x 0031-9007x 1079-7114
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-84165
856	4 8	u https://doi.org/10.1103/PhysRevLett.76.3626

By the author/editor: Olsson, L O; Andersson, C B M; Hakansson, M C; Kanski, J; Ilver, L; Karlsson, Ulf O

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