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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02729naa a2200385 4500 | |
| 001 | oai:DiVA.org:liu-109915 | |
| 003 | SwePub | |
| 008 | 140828s2013 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1099152 URI |
| 024 | 7 | a https://doi.org/10.1016/j.apsusc.2012.03.1832 DOI |
| 040 | a (SwePub)liu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Bertuccio, Giuseppeu Politecnico di Milano, Como Campus, Italy,Department of Electronic Engineering and Information Science4 aut |
| 245 | 1 0 | a Silicon carbide detector for laser-generated plasma radiation |
| 264 | 1 | b Elsevier,c 2013 |
| 338 | a print2 rdacarrier | |
| 500 | a This research has been supported by the Italian National Institute of Nuclear Physics (INFN) under LIANA experiment and by Laser-LabEurope (Project No.: pals 001653). | |
| 520 | a We present the performance of a Silicon Carbide (SiC) detector in the acquisition of the radiation emittedby laser generated plasmas. The detector has been employed in time of flight (TOF) configuration withinan experiment performed at the Prague Asterix Laser System (PALS). The detector is a 5 mm2 area 100 nmthick circular Ni SiC Schottky junction on a high purity 4H-SiC epitaxial layer 115 μm thick. Currentsignals from the detector with amplitudes up to 1.6 A have been measured, achieving voltage signals over 80 V on a 50 Ω load resistance with excellent signal to noise ratios. Resolution of few nanoseconds hasbeen experimentally demonstrated in TOF measurements. The detector has operated at 250 V DC biasunder extreme operating conditions with no observable performance degradation. | |
| 650 | 7 | a NATURVETENSKAPx Fysik0 (SwePub)1032 hsv//swe |
| 650 | 7 | a NATURAL SCIENCESx Physical Sciences0 (SwePub)1032 hsv//eng |
| 653 | a Semiconductor radiation detectors | |
| 653 | a Silicon carbide | |
| 653 | a Laser | |
| 653 | a Plasma | |
| 653 | a Radiation spectroscopy | |
| 700 | 1 | a Puglisi, Donatellau Politecnico di Milano, Como Campus, Italy,Department of Electronic Engineering and Information Science4 aut0 (Swepub:liu)donpu97 |
| 700 | 1 | a Torrisi, Lorenzou University of Messina, Italy,Department of Physics4 aut |
| 700 | 1 | a Lanzieri, Claudiou Selex Sistemi Integrati S.p.A., Rome, Italy4 aut |
| 710 | 2 | a Politecnico di Milano, Como Campus, Italyb Department of Electronic Engineering and Information Science4 org |
| 773 | 0 | t Applied Surface Scienced : Elsevierg 272, s. 128-131q 272<128-131x 0169-4332x 1873-5584 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-109915 |
| 856 | 4 8 | u https://doi.org/10.1016/j.apsusc.2012.03.183 |
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