Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors

Mathijssen, Simon G. J. (author): Philips Research Labs, Netherlands; Eindhoven University of Technology, Netherlands

Spijkman, Mark-Jan (author): Philips Research Labs, Netherlands; University of Groningen, Netherlands

Andringa, Anne-Marije (author): Philips Research Labs, Netherlands; University of Groningen, Netherlands

McCulloch, Iain (author): University of London Imperial Coll Science Technology and Med, England

Janssen, Rene A. J. (author): Eindhoven University of Technology, Netherlands

de Leeuw, Dago M. (author): Philips Research Labs, Netherlands; University of Groningen, Netherlands

(creator_code:org_t)

2010-09-21
2010
English.
In: Advanced Materials. - : Wiley-VCH Verlag. - 0935-9648 .- 1521-4095. ; 22:45, s. 5105-

Related links:: https://pure.rug.nl/...; show more...; https://urn.kb.se/re...; https://doi.org/10.1...; show less...

Abstract Subject headings

The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.

By the author/editor: Mathijssen, Simo ...; Spijkman, Mark-J ...; Andringa, Anne-M ...; van Hal, Paul A.; McCulloch, Iain; Kemerink, Martij ...; show more...; Janssen, Rene A. ...; de Leeuw, Dago M ...; show less...

About the subject

NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

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