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Enhanced dynamic an...
Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
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- Catarino, N (författare)
- Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU
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- Nogales, E (författare)
- Departamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU
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- Franco, N (författare)
- Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
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- Darakchieva, Vanya (författare)
- Instituto Tecnol´ogico e Nuclear/IST, Sacavem, Portugal, EU; Centro de F´ısica Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
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- Miranda, S. M. C. (författare)
- Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU
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- Mendez, B (författare)
- Departamento de Física de Materiales, Universidad Complutense - 28040 Madrid, Spain, EU
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- Alves, E (författare)
- Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
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- Marques, J. G. (författare)
- Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
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- Lorenz, K (författare)
- Instituto Tecnológico e Nuclear/IST - Estrada Nacional 10, 2686-953 Sacavém, Portugal, EU and Centro de Física Nuclear da Universidade de Lisboa - Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugal, EU
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(creator_code:org_t)
- 2012-03-20
- 2012
- Engelska.
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Ingår i: Europhysics letters. - : IOP Publishing. - 0295-5075 .- 1286-4854. ; 97:6, s. 68004-
- Relaterad länk:
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https://eprints.ucm....
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, i.e. along the a-direction in a-plane and along the c-direction in c-plane GaN. The defect profile is bimodal with a pronounced surface damage peak and a second damage peak deeper in the bulk of the samples in both cases. For both surface orientations, the bulk damage saturates for high fluences. Interestingly, the saturation level for a-plane GaN is nearly three times lower than that for c-plane material suggesting very efficient dynamic annealing and strong resistance to radiation. a-plane GaN also shows superior damage recovery during post-implant annealing compared to c-plane GaN. For the lowest fluence, damage in a-plane GaN was fully removed and strong Eu-related red luminescence is observed. Although some residual damage remained after annealing for higher fluences as well as in all c-plane samples, optical activation was achieved in all samples revealing the red emission lines due to the 5D0→ 7F2transition in the Eu3+ ion. The presented results demonstrate a great promise for the use of ion beam processing for a-plane GaN based electronic devices as well as for the development of radiation tolerant electronics.
Nyckelord
- III-V semiconductors
- Doping and impurity implantation
- Cathodoluminescence
- ionoluminescence
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