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Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxy
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- Chen, Ruei-San (author)
- National Taiwan University of Science and Technology, Taiwan
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- Tang, Chih-Che (author)
- Department of Electronic Engineering, National Taiwan University of Science and Technology, Taiwan
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- Hsiao, Ching-Lien (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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- Holtz, Per Olof (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Birch, Jens (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
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(creator_code:org_t)
- Elsevier, 2013
- 2013
- English.
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In: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 285, s. 625-628
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https://doi.org/10.1...
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Abstract
Subject headings
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- The electronic transport properties of the wide-bandgap aluminum indium nitride (AlInN) nanorods (NRs) grown by ultrahigh-vacuum magnetron sputter epitaxy (MSE) have been studied. The conductivities of the ternary compound nanostructure locates at the value of 15 Q-1 cm -1, which is respectively one and two orders of magnitude lower than the binary GaN and InN counterparts grown by chemical vapor deposition (CVD). The very shallow donor level/band with the activation energy at 11 + 2 meV was obtained by the temperature-dependent measurement. In addition, the photoconductivity has also been investigated. The photoconductive (PC) gain of the NRs device can reach near 2400 under a low bias at 0.1 V and the light intensity at 100W m-2 for ultraviolet response in vacuum. The power-insensitive gain and ambience-dependent photocurrent are also observed, which is attributed to the probable surfacecontrolled PC mechanism in this ternary nitride nanostructure.
Keyword
- Aluminum indium nitride
- Nanorod
- Photoconductivity
- Magnetron sputter epitaxy
Publication and Content Type
- ref (subject category)
- art (subject category)
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