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Interstitial-carbon...
Interstitial-carbon hydrogen interaction in silicon
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- Safonov, A N (author)
- King's College London
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- Lightowlers, E C (author)
- King's College London
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- Davies, Gordon (author)
- King's College London
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- Leary, P (author)
- University of Exeter
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- Jones, R (author)
- University of Exeter
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- Öberg, Sven (author)
- Luleå tekniska universitet,Matematiska vetenskaper
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(creator_code:org_t)
- 1996
- 1996
- English.
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In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 77:23, s. 4812-4815
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- The T-line luminescence system is created in Si by annealing at 400-600 °C. Shifts and splitting of the spectral features with 13C and D isotope substitution identify the presence of two C atoms and one H atom in the center. Uniaxial stress and magnetic field measurements show that the T center has monoclinic I symmetry and possesses an acceptor ( -/0) level at 0.2 eV below the conduction band. Ab initio cluster calculations lead to a structure in which an interstitial C-H defect binds with a substitutional C atom. The calculated vibrational modes are in good agreement with those observed.
Subject headings
- NATURVETENSKAP -- Matematik -- Beräkningsmatematik (hsv//swe)
- NATURAL SCIENCES -- Mathematics -- Computational Mathematics (hsv//eng)
Keyword
- Scientific Computing
- Teknisk-vetenskapliga beräkningar
Publication and Content Type
- ref (subject category)
- art (subject category)
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