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On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen
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- Mikhaylov, Aleksey I. (author)
- St. Petersburg State Electrotechnical University LETI, Russia
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- Afanasiev, A. V. (author)
- St. Petersburg State Electrotechnical University LETI, Russia
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- Ilyin, V. A. (author)
- St. Petersburg State Electrotechnical University LETI, Russia
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- St Petersburg State Electrotechnical University LETI, Russia Ascatron AB, Sweden (creator_code:org_t)
- Maik Nauka-Interperiodica Publishing, 2014
- 2014
- English.
- In: Semiconductors (Woodbury, N.Y.). - : Maik Nauka-Interperiodica Publishing. - 1063-7826 .- 1090-6479. ; 48:12, s. 1581-1585
- Journal article (peer-reviewed)
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- A method is suggested for reducing the density of surface states at the 4H-SiC/SiO2 interface by the implantation of phosphorus ions into a 4H-SiC epitaxial layer immediately before the growth of a gate insulator in an atmosphere of dry oxygen. A significant decrease in the density of surface states is observed at a phosphor-ion concentration at the SiO2/SiC interface exceeding 1018 cm−3. However, together with the passivation of surface states, the introduction of phosphorus ions leads to an increase in the built-in charge in the insulator and also slightly deteriorates the reliability of the gate insulator fabricated by this technique.
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