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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 01972naa a2200373 4500 | |
| 001 | oai:DiVA.org:uu-37514 | |
| 003 | SwePub | |
| 008 | 081017s2001 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-375142 URI |
| 040 | a (SwePub)uu | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a ref2 swepub-contenttype |
| 072 | 7 | a art2 swepub-publicationtype |
| 100 | 1 | a Sadowski, Ju Uppsala universitet,Institutionen för materialvetenskap,SOLID STATE PHYSICS4 aut |
| 245 | 1 0 | a Properties of GaMnAs layers grown by migration enhanced epitaxy at very low substrate temperatures |
| 264 | 1 | b ELSEVIER SCIENCE BV,c 2001 |
| 338 | a print2 rdacarrier | |
| 500 | a Addresses: Sadowski J, Univ Lund, Max Lab, POB 118, SE-22100 Lund, Sweden. Univ Lund, Max Lab, SE-22100 Lund, Sweden. Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland. Uppsala Univ, Dept Mat Sci, SE-75121 Uppsala, Sweden. Chalmers Univ Technol, Dept Ex | |
| 520 | a We report on the successful growth of GaMnAs layers by means of migration enhanced epitaxy (MEE) at very low substrate temperatures (below 150 degreesC). The MEE growth proceeds under stoichiometric conditions. This should lead to a lower concentration of | |
| 653 | a ferromagnetic semiconductors; migration enhanced epitaxy; molecular beam epitaxy; DILUTED MAGNETIC SEMICONDUCTORS; MOLECULAR-BEAM EPITAXY; FERROMAGNETISM; (GA;MN)AS; GAAS | |
| 700 | 1 | a Mathieu, R4 aut |
| 700 | 1 | a Svedlindh, P4 aut |
| 700 | 1 | a Karlsteen, M4 aut |
| 700 | 1 | a Kanski, J4 aut |
| 700 | 1 | a Ilver, L4 aut |
| 700 | 1 | a Asklund, H4 aut |
| 700 | 1 | a Swiatek, K4 aut |
| 700 | 1 | a Domagala, JZ4 aut |
| 700 | 1 | a Bak-Misiuk, J4 aut |
| 700 | 1 | a Maude, D4 aut |
| 710 | 2 | a Uppsala universitetb Institutionen för materialvetenskap4 org |
| 773 | 0 | t PHYSICA Ed : ELSEVIER SCIENCE BVg 10:1-3, s. 181-185q 10:1-3<181-185x 1386-9477 |
| 856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-37514 |
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