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Half metallic ferromagnetic behavior in (Ga, Cr)N and (Ga, Cr, V)N compounds for spintronic technologies : Ab initio and Monte Carlo methods
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- Bouziani, I (author)
- Univ Moulay Ismail, Fac Sci, Phys Dept, Unite Associee CNRST URAC 08,LP2MS, BP 11201, Meknes, Morocco
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- Benhouria, Y. (author)
- Univ Moulay Ismail, Fac Sci, Phys Dept, Unite Associee CNRST URAC 08,LP2MS, BP 11201, Meknes, Morocco
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- Essaoudi, I (author)
- Uppsala universitet,Materialteori,Univ Moulay Ismail, Fac Sci, Phys Dept, Unite Associee CNRST URAC 08,LP2MS, BP 11201, Meknes, Morocco
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- (creator_code:org_t)
- Elsevier BV, 2019
- 2019
- English.
- In: Journal of Magnetism and Magnetic Materials. - : Elsevier BV. - 0304-8853 .- 1873-4766. ; 477, s. 220-225
- Journal article (peer-reviewed)
Abstract
Subject headings
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- In this article, we investigate the magnetic and electronic properties of GaN doped with simple and double impurities utilizing Ab initio and Monte Carlo studies. We have predicted that (Ga, Cr)N and (Ga, Cr, V)N compounds exhibit ferromagnetic- and halfmetallic-behavior with 100% spin polarization at the Fermi level. Moreover, we have found that Ga1-xCrxN and Ga1-2xCrxVxN (x = 0.04, 0.05 and 0.06) show a second order ferromagnetic transition and that their T-c is above room temperature. These predictions make (Ga, Cr)N and (Ga, Cr, V)N compounds strong candidates for spintronic technologies.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- Spintronic
- Gallium nitride
- Diluted magnetic semiconductors
- Ab initio calculations
- Monte Carlo method
Publication and Content Type
- ref (subject category)
- art (subject category)
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