Search: onr:"swepub:oai:DiVA.org:uu-458228" > SiOx patterned base...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 03178naa a2200421 4500 | |
001 | oai:DiVA.org:uu-458228 | |
003 | SwePub | |
008 | 211109s2021 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-4582282 URI |
024 | 7 | a https://doi.org/10.1109/PVSC43889.2021.95185162 DOI |
040 | a (SwePub)uu | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a kon2 swepub-publicationtype |
100 | 1 | a Oliveira, Kevinu Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.4 aut |
245 | 1 0 | a SiOx patterned based substrates implemented in Cu(In,Ga)Se-2 ultrathin solar cells :b optimum thickness |
264 | 1 | b Institute of Electrical and Electronics Engineers (IEEE),c 2021 |
338 | a print2 rdacarrier | |
520 | a Interface recombination in sub-mu m optoelectronic devices has a major harmful impact in devices performance, showing the need for tailored passivation strategies in order to reach a technological boost. In this work, SiOx based substrates were developed and integrated in ultrathin CIGS solar cells. This study aims at understanding the impact of several SiOx layer thicknesses (3, 8 and 25 nm) when this material is used as a passivation layer. Analysing their electrical parameters, the 8 nm novel SiOx based substrates achieved light to power conversion efficiency values up to 13.2 %, a 1.3 % absolute improvement over the conventional substrate (without SiOx). | |
650 | 7 | a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng |
653 | a Cu(In | |
653 | a Ga)Se-2 | |
653 | a SiOx | |
653 | a Rear Passivation Strategy | |
700 | 1 | a Chen, Wei-Chaou Uppsala universitet,Solcellsteknik4 aut0 (Swepub:uu)chewe640 |
700 | 1 | a Lontchi, Jacksonu UCLouvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium.4 aut |
700 | 1 | a Oliveira, Antonio J. N.u Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.4 aut |
700 | 1 | a Teixeira, Jennifer P.u Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.4 aut |
700 | 1 | a Flandre, Denisu UCLouvain, ICTEAM Inst, B-1348 Louvain La Neuve, Belgium.4 aut |
700 | 1 | a Edoff, Marika,d 1965-u Uppsala universitet,Solcellsteknik4 aut0 (Swepub:uu)maribode |
700 | 1 | a Fernandes, Paulo A.u Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.4 aut |
700 | 1 | a Salome, Pedro M. P.u Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.4 aut |
710 | 2 | a Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.b Solcellsteknik4 org |
773 | 0 | t 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)d : Institute of Electrical and Electronics Engineers (IEEE)g , s. 928-930q <928-930z 9781665419222 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-458228 |
856 | 4 8 | u https://doi.org/10.1109/PVSC43889.2021.9518516 |
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