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Fabrication of Sing...
Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth
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- Menon, Heera (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Morgan, Nicholas Paul (författare)
- Swiss Federal Institute of Technology
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- Hetherington, Crispin (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
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- Athle, Robin (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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- Steer, Matthew (författare)
- University of Glasgow
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- Thayne, Iain (författare)
- University of Glasgow
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- Fontcuberta i Morral, Anna (författare)
- Swiss Federal Institute of Technology
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- Borg, Mattias (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2021-11-05
- 2022
- Engelska.
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Ingår i: Physica Status Solidi (A) Applications and Materials Science. - : Wiley. - 1862-6300. ; 219:4
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http://dx.doi.org/10... (free)
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Abstract
Ämnesord
Stäng
- InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- electron backscatter diffraction (EBSD)
- InSb
- rapid melt growth (RMG)
- Si
- single crystal
- TEM
- XRR
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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