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Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.

Thompson, Michael D (author)

Alhodaib, Aiyeshah (author)

Craig, Adam P (author)

Robson, Alex (author)

Aziz, Atif (author)

Krier, Anthony (author)

Svensson, Johannes (author): Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH

Wernersson, Lars-Erik (author): Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH

Sanchez, Ana M (author)

Marshall, Andrew R J (author)

(creator_code:org_t)

2015-12-30
2016
English.
In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 16:1, s. 182-187

Related links:: http://dx.doi.org/10...; show more...; https://pubs.acs.org...; https://lup.lub.lu.s...; https://doi.org/10.1...; show less...

Journal article (peer-reviewed)

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Axially doped p-i-n InAs0.93Sb0.07 nanowire arrays have been grown on Si substrates and fabricated into photodetectors for shortwave infrared detection. The devices exhibit a leakage current density around 2 mA/cm(2) and a 20% cutoff of 2.3 μm at 300 K. This record low leakage current density for InAsSb based devices demonstrates the suitability of nanowires for the integration of III-V semiconductors with silicon technology.

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By the author/editor: Thompson, Michae ...; Alhodaib, Aiyesh ...; Craig, Adam P; Robson, Alex; Aziz, Atif; Krier, Anthony; show more...; Svensson, Johann ...; Wernersson, Lars ...; Sanchez, Ana M; Marshall, Andrew ...; show less...

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ENGINEERING AND TECHNOLOGY: ENGINEERING AND ...; and Nano technology; and Nano technology

Articles in the publication: Nano Letters

By the university: Lund University

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