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Hydrophobic low tem...
Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
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- Amirfeiz, Petra, 1973 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Sanz-Velasco, Anke, 1971 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bengtsson, Stefan, 1961 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. ; 19, s. 267-
- Relaterad länk:
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https://research.cha...
Abstract
Ämnesord
Stäng
- The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Annealing
- Hydrophobicity
- Bonding
- Interfaces (materials)
- Interfacial energy
- Plasma applications
- Silicon wafers
- Hydrofluoric acid
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)