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The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

Wiesner, M. (author)
Uniwersytet im. Adama Mickiewicza w Poznaniu,Adam Mickiewicz University in Poznań
Trzaskowska, A. (author)
Uniwersytet im. Adama Mickiewicza w Poznaniu,Adam Mickiewicz University in Poznań
Mroz, B. (author)
Uniwersytet im. Adama Mickiewicza w Poznaniu,Adam Mickiewicz University in Poznań
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Charpentier, Sophie, 1983 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Wang, S. (author)
Chinese Academy of Sciences
Song, Yuxin, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Lombardi, Floriana, 1967 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Lucignano, P. (author)
Universita Degli Studi Di Napoli Federico Ii,University of Naples Federico II
Benedek, G. (author)
Donostia International Physics Center
Campi, D. (author)
Universita' degli Studi di Milano-Bicocca,University of Milano-Bicocca
Bernasconi, M. (author)
Universita' degli Studi di Milano-Bicocca,University of Milano-Bicocca
Guinea, Francisco (author)
University of Manchester,IMDEA Nanoscience Institute
Tagliacozzo, A. (author)
Laboratori Nazionali di Frascati di INFN,Universita Degli Studi Di Napoli Federico Ii,University of Naples Federico II
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Uniwersytet im Adama Mickiewicza w Poznaniu Chalmers tekniska högskola (creator_code:org_t)
2017-11-27
2017
English.
In: Scientific Reports. - : Springer Science and Business Media LLC. - 2045-2322 .- 2045-2322. ; 7:1
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  • Journal article (peer-reviewed)
Abstract Subject headings
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  • It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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