Na0.5K0.5NbO3/SiO2/Si Thin Film Varactor

Cho, Coong-Rae (författare)

Koh, Jung-Hyuk (författare)

Grishin, Alex (författare)

Abadei, Saeed, 1961 (författare): Chalmers tekniska högskola,Chalmers University of Technology

Gevorgian, Spartak, 1948 (författare): Chalmers tekniska högskola,Chalmers University of Technology

Grishin, Alexander M. (författare): KTH,Mikroelektronik och informationsteknik, IMIT

(creator_code:org_t)

AIP Publishing, 2000
2000
Engelska.
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 76, s. 1761-

Relaterad länk:: https://doi.org/10.1...; visa fler...; https://research.cha...; https://urn.kb.se/re...; visa färre...

Abstract Ämnesord

Stäng

Perfectly c-axis oriented micrometer thickNa 0.5 K 0.5 NbO 3 (NKN) films have been prepared on a thermally grown ultrathinSiO 2 template layer onto a Si(001) wafer by the pulsed laser deposition technique. A x-ray diffraction θ–2θ scan reveals multiple-cell structuring of single phase NKN film along the polar axis, while filmsgrown onto amorphous ceramic (Corning) glass show a mixture of slightly c-axis oriented NKN and pyrochlore phases. This implies a small amount ofSiO 2 crystallites distributed in an amorphous matrix inherit Si(001) orientation and promotes highly oriented NKN film growth. NKN filmdielectric permittivityε ′ was found to vary from 114.0 to 107.2 in the frequency range 1 kHz–1 MHz, while the resistivity was on the order of2.6×10 10 Ω cm @ 20 kV/cm. The planar interdigital variable reactance device (varactor) based on theNKN/SiO 2 /Si thin film structure possesses a dissipation factor of 0.8% at 1 MHz and zero bias, electrical tunability of 3.1%, and nA order leakage current at 20 V bias at room temperature.

Av författaren/redakt...: Cho, Coong-Rae; Koh, Jung-Hyuk; Grishin, Alex; Abadei, Saeed, 1 ...; Gevorgian, Spart ...; Grishin, Alexand ...

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