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850 nm datacom VCSE...
850 nm datacom VCSELs for higher-speed and longer-reach transmission
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- Haglund, Erik, 1985 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Westbergh, Petter, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Haglund, Emanuel, 1988 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Safaisini, Rashid, 1981 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Gustavsson, Johan, 1974 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Szczerba, Krzysztof, 1985 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Haglund, Åsa, 1976 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2013
- 2013
- English.
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In: European VCSEL Day 2013.
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Abstract
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- The 850 nm GaAs-based VCSEL is already the dominating technology for transmitters in optical interconnects up to 100 m in datacenters, thanks to low-cost fabrication, excellent high-speed properties at low currents and the existence of high-speed OM4 multimode fiber optimized for this particular wavelength. Future datacenters will require faster and more energy-efficient VCSELs to increase the overall bandwidth and reduce the power consumption of the datacenter network. In addition, longer-reach interconnects exceeding 1 km will also be required as datacenters grow into large multi-building complexes.By optimizing the doping profiles of the DBRs to reduce resistance, using a short (½-λ) cavity to improve longitudinal optical confinement and optimizing the photon lifetime for optimal damping, we obtained a record-high small-signal modulation bandwidth of 28 GHz for a ~4 µm oxide aperture VCSEL. A 7 µm oxide aperture VCSEL (~27 GHz bandwidth) enabled error-free transmission (bit-error-rate 300 m), the large spectral width of VCSELs leads to severe signal degradation by fiber dispersion. We have investigated two methods of fabricating low-spectral width quasi-single mode VCSELs to mitigate this problem. By using a small oxide aperture of ~3 µm, error-free transmission was achieved at 22 Gbit/s over 1.1 km of OM4 fiber. An alternative approach is to use an integrated mode filter in the form of a shallow surface relief to reduce the spectral width of the VCSEL. The mode filter allows for the use of a larger oxide aperture and thereby enables a lower resistance and operation at a lower current density. A 5 µm oxide aperture VCSEL with a mode filter enabled error-free transmission at 25 Gbit/s over 500 m of OM4 fiber.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- high-speed
- vertical-cavity surface-emitting laser
- quasi-single mode
- VCSEL
- datacom
Publication and Content Type
- kon (subject category)
- ref (subject category)
To the university's database
- By the author/editor
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Haglund, Erik, 1 ...
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Westbergh, Pette ...
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Haglund, Emanuel ...
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Safaisini, Rashi ...
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Gustavsson, Joha ...
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Szczerba, Krzysz ...
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show more...
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Haglund, Åsa, 19 ...
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Larsson, Anders, ...
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- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Electrical Engin ...
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and Telecommunicatio ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
- Articles in the publication
- European VCSEL D ...
- By the university
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Chalmers University of Technology