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Optical properties of SiGe alloys

Ahuja, Rajeev (author)
KTH,Materialvetenskap
Persson, Clas (author)
da Silva, A. F. (author)
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de Almeida, J. S. (author)
Araujo, C. M. (author)
Johansson, Börje (author)
KTH,Materialvetenskap
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 (creator_code:org_t)
AIP Publishing, 2003
2003
English.
In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:7, s. 3832-3836
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The optical properties of Si1-xGex have been investigated theoretically using a full-potential linear muffin-tin-orbital method. We present the density-of-states as well as the real and imaginary parts of the dielectric function. The calculated dielectric function was found to be in good agreement with the spectroscopic ellipsometry measurements by J. Bahng , J. Phys.: Condens. Matter 13, 777 (2001), and we obtained a static dielectric constant of epsilon(0)=12.19+2.45x in the Si rich regime (xless than or equal to0.5).

Keyword

bicmos technology
enhancement-mode
brillouin-zone
special points
silicon
band
transistors
systems

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ref (subject category)
art (subject category)

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