WFRF:(Kaczmarczyk M)
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| Fältnamn | Indikatorer | Metadata |
|---|---|---|
| 000 | 02806naa a2200457 4500 | |
| 001 | oai:research.chalmers.se:dbfac2de-9c85-49b0-97ff-a4f14338cdcf | |
| 003 | SwePub | |
| 008 | 171007s2010 | |||||||||||000 ||eng| | |
| 024 | 7 | a https://doi.org/10.1007/s11664-010-1125-42 DOI |
| 024 | 7 | a https://research.chalmers.se/publication/1222942 URI |
| 040 | a (SwePub)cth | |
| 041 | a engb eng | |
| 042 | 9 SwePub | |
| 072 | 7 | a art2 swepub-publicationtype |
| 072 | 7 | a ref2 swepub-contenttype |
| 100 | 1 | a Kaniewska, M.4 aut |
| 245 | 1 0 | a Classification of Energy Levels in Quantum Dot Structures by Depleted Layer Spectroscopy |
| 264 | c 2010-03-04 | |
| 264 | 1 | b Springer Science and Business Media LLC,c 2010 |
| 520 | a The coexistence of quantum confined energy levels and defect energy levels in quantum dot (QD) structures may cause difficulties in distinguishing between their different origin when using deep-level transient spectroscopy (DLTS). Using InAs/GaAs QDs as demonstration vehicles, we present methodologies to obtain such a classification by DLTS. QD-related spectra measured as a function of repetition frequency of electrical pulses, f, or temperature, T, and reverse voltage, V (R), are depicted as contour plots on (f, V (R)) and (T, V (R)) planes, thus reflecting the complex thermal and tunneling emission of electrons from the ground and excited states. Defect-related levels give rise to different contour patterns and undergo modification, exhibiting double-peak structured emission when defects are agglomerated in the vicinity of the QD plane. This effect is interpreted in terms of an interaction between electron states in traps and the confined QD states. | |
| 650 | 7 | a TEKNIK OCH TEKNOLOGIERx Annan teknik0 (SwePub)2112 hsv//swe |
| 650 | 7 | a ENGINEERING AND TECHNOLOGYx Other Engineering and Technologies0 (SwePub)2112 hsv//eng |
| 653 | a deep-level transient spectroscopy | |
| 653 | a GAAS/GAAS | |
| 653 | a structures | |
| 653 | a defect energy levels | |
| 653 | a TRANSIENT SPECTROSCOPY | |
| 653 | a quantum dot | |
| 653 | a GROWTH TECHNIQUE | |
| 653 | a Quantum confined energy levels | |
| 653 | a STATES | |
| 653 | a DEEP LEVELS | |
| 653 | a ELECTRON TRAPS | |
| 653 | a HETEROSTRUCTURES | |
| 700 | 1 | a Engström, Olof,d 1943u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)oleng |
| 700 | 1 | a Kaczmarczyk, M.4 aut |
| 710 | 2 | a Chalmers tekniska högskola4 org |
| 773 | 0 | t Journal of Electronic Materialsd : Springer Science and Business Media LLCg 39:6, s. 766-772q 39:6<766-772x 1543-186Xx 0361-5235 |
| 856 | 4 | u http://dx.doi.org/10.1007/s11664-010-1125-4y FULLTEXT |
| 856 | 4 8 | u https://doi.org/10.1007/s11664-010-1125-4 |
| 856 | 4 8 | u https://research.chalmers.se/publication/122294 |
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