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Nanowire fin field effect transistors via UV-based nanoimprint lithography
- Fuchs, A. (author)
- Bender, M. (author)
- Plachetka, U. (author)
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- Kock, L. (author)
- Wahlbrink, T. (author)
- Gottlob, H. D. B. (author)
- Efavi, J. K. (author)
- Moeller, M. (author)
- Schmidt, M. (author)
- Mollenhauer, T. (author)
- Moormann, C. (author)
- Kurz, H. (author)
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- (creator_code:org_t)
- American Vacuum Society, 2006
- 2006
- English.
- In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 24:6, s. 2964-2967
- Journal article (peer-reviewed)
Abstract
Subject headings
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- A triple step alignment process for UV nanoimprint lithography (UV-NIL) for the fabrication of nanoscale fin field effect transistors (FinFETs) is presented. An alignment accuracy is demonstrated between two functional layers of less than 20 nm (3 sigma). The electrical characterization of the FinFETs fabricated by a full NIL process demonstrates the potential of UV-NIL for future nanoelectronic devices.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
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- ref (subject category)
- art (subject category)
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- Fuchs, A.
- Bender, M.
- Plachetka, U.
- Kock, L.
- Wahlbrink, T.
- Gottlob, H. D. B ...
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- Efavi, J. K.
- Moeller, M.
- Schmidt, M.
- Mollenhauer, T.
- Moormann, C.
- Lemme, Max C., 1 ...
- Kurz, H.
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- ENGINEERING AND TECHNOLOGY
- ENGINEERING AND ...
- and Nano technology
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- Royal Institute of Technology
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