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MBE growth and properties of bulk BeCdSe alloys and digital (BeSe : CdSe)/ZnSe quantum wells

Ivanov, S.V. (author)
Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation
Toropov, A.A. (author)
Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation
Shubina, T.V. (author)
Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation
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Lebedev, A.V. (author)
Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation
Sorokin, S.V. (author)
Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation
Sitnikova, A.A. (author)
Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation
Kop'Ev, P.S. (author)
Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation
Reuscher, G. (author)
Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany
Keim, M. (author)
Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany
Bensing, F. (author)
Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany
Waag, A. (author)
Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany
Landwehr, G. (author)
Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany
Pozina, Galia (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Bergman, Peder (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Monemar, Bo (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St Petersburg, Russian Federation Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany (creator_code:org_t)
2000
2000
English.
In: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 214, s. 109-114
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • We report for the first time on MBE growth, structural and optical properties of single layers, quantum well structures and short-period superlattices based on BexCd1-xSe ternary alloys on GaAs. Both the conventional MBE growth mode and the sub-monolayer digital alloying technique (SDA) have been employed for the fabrication of the structures. Compositional boundaries of an instability region 0.03 < x < 0.38, calculated in a regular solution approximation for the completely coherent system, agree well with available experimental data. A suppression of the phase separation in BeCdSe by elastic stress in the layer, accompanied by a strong reduction of the Cd incorporation coefficient has been found. Ultrathin 2.8 ML BeCdSe SDA QWs with x approx. 0.15 demonstrate about an order of magnitude increase in the PL intensity with respect to the pure CdSe one, probably resulting from an enhanced carrier localization efficiency. Eg as a function of the Be content reveals a strong bowing in optical data, which allows one to consider BeCdSe alloys with compositions nearly lattice-matched to GaAs as potential materials for the active region of blue-green lasers.

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TECHNOLOGY
TEKNIKVETENSKAP

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