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LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00004041naa a2200445 4500
001oai:DiVA.org:liu-47638
003SwePub
008091011s2000 | |||||||||||000 ||eng|
024a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-476382 URI
024a https://doi.org/10.1016/S0022-0248(00)00041-52 DOI
040 a (SwePub)liu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
100a Ivanov, S.V.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut
2451 0a MBE growth and properties of bulk BeCdSe alloys and digital (BeSe :b CdSe)/ZnSe quantum wells
264 1c 2000
338 a print2 rdacarrier
520 a We report for the first time on MBE growth, structural and optical properties of single layers, quantum well structures and short-period superlattices based on BexCd1-xSe ternary alloys on GaAs. Both the conventional MBE growth mode and the sub-monolayer digital alloying technique (SDA) have been employed for the fabrication of the structures. Compositional boundaries of an instability region 0.03 < x < 0.38, calculated in a regular solution approximation for the completely coherent system, agree well with available experimental data. A suppression of the phase separation in BeCdSe by elastic stress in the layer, accompanied by a strong reduction of the Cd incorporation coefficient has been found. Ultrathin 2.8 ML BeCdSe SDA QWs with x approx. 0.15 demonstrate about an order of magnitude increase in the PL intensity with respect to the pure CdSe one, probably resulting from an enhanced carrier localization efficiency. Eg as a function of the Be content reveals a strong bowing in optical data, which allows one to consider BeCdSe alloys with compositions nearly lattice-matched to GaAs as potential materials for the active region of blue-green lasers.
653 a TECHNOLOGY
653 a TEKNIKVETENSKAP
700a Toropov, A.A.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut
700a Shubina, T.V.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut
700a Lebedev, A.V.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut
700a Sorokin, S.V.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut
700a Sitnikova, A.A.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut
700a Kop'Ev, P.S.u Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federation4 aut
700a Reuscher, G.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut
700a Keim, M.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut
700a Bensing, F.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut
700a Waag, A.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut
700a Landwehr, G.u Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 aut
700a Pozina, Galiau Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)galpo50
700a Bergman, Pederu Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)pedbe86
700a Monemar, Bou Linköpings universitet,Tekniska högskolan,Halvledarmaterial4 aut0 (Swepub:liu)bomo46
710a Ioffe Institute of RAS, Politeknicheskaya 26, 194021, St. Petersburg, Russian Federationb Physikalisches Inst. Univ. Wurzburg, Am Hubland, D-97074, Würzburg, Germany4 org
773t Journal of Crystal Growthg 214, s. 109-114q 214<109-114x 0022-0248x 1873-5002
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-47638
8564 8u https://doi.org/10.1016/S0022-0248(00)00041-5

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