Optical and electronic properties of GaInNP alloys - a new material system for lattice matching to GaAs

↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Sökning: L773:1862 6319 > Optical and electro...

LIBRIS Formathandbok (Information om MARC21)

Fältnamn	Indikatorer	Metadata
000		02839naa a2200349 4500
001		oai:DiVA.org:liu-45908
003		SwePub
008		091011s2008 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-459082 URI
024	7	a https://doi.org/10.1002/pssa.2007774572 DOI
040		a (SwePub)liu
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a art2 swepub-publicationtype
100	1	a Buyanova, Irina A.u Linköpings universitet,Funktionella elektroniska material,Tekniska högskolan4 aut0 (Swepub:liu)iribo40
245	1 0	a Optical and electronic properties of GaInNP alloys - a new material system for lattice matching to GaAs
264	1	b Wiley,c 2008
338		a print2 rdacarrier
520		a In this paper we will review our recent results from optical characterization studies of GaInNP. We will show that N incorporation in these alloys affects their structural and defect properties, as well as the electronic structure. The main structural changes include (i) increasing carrier localization due to strong compositional fluctuations, which is typical for all dilute nitrides, and (ii) N-induced long range ordering effects, specific for GaInNP. The observed degradation of radiative efficiency of the alloys upon increasing N content is attributed to formation of several defects acting as centres of efficient non-radiative recombination. One of the defects is identified as a complex involving a Ga interstitial atom. N incorporation is also found to change the band line up from the type I in the GaInP/GaAs structures to the type 11 in the GaInNP/GaAs heterojunctions with [N] > 0.5%. For the range of N compositions studied ([N] <= 2%), a conduction band offset at the GaInNP/GaAs interface is found to nearly linearly depend on [N] at -0.10 eV/%, whereas the valence band offset remains unaffected. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
650	7	a NATURVETENSKAPx Fysikx Den kondenserade materiens fysik0 (SwePub)103042 hsv//swe
650	7	a NATURAL SCIENCESx Physical Sciencesx Condensed Matter Physics0 (SwePub)103042 hsv//eng
653		a TECHNOLOGY
653		a TEKNIKVETENSKAP
653		a Semiconductor physics
653		a Halvledarfysik
700	1	a Chen, Weiminu Linköpings universitet,Tekniska högskolan,Funktionella elektroniska material4 aut0 (Swepub:liu)weich55
700	1	a Tu, C. W.u Univ Calif, Dept Elect & Comp Engn, La Jolla, CA USA4 aut
710	2	a Linköpings universitetb Funktionella elektroniska material4 org
773	0	t Physica Status Solidi (a) applications and materials scienced : Wileyg 205:1, s. 101-106q 205:1<101-106x 1862-6300x 1862-6319
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-45908
856	4 8	u https://doi.org/10.1002/pssa.200777457

Hitta via bibliotek

Physica Status Solidi (a) applications and materials science (Sök värdpublikationen i LIBRIS)

Till lärosätets databas

Hitta mer i SwePub

Av författaren/redakt...: Buyanova, Irina ...; Chen, Weimin; Tu, C. W.

Om ämnet

NATURVETENSKAP: NATURVETENSKAP; och Fysik; och Den kondenserade ...

Artiklar i publikationen: Physica Status S ...

Av lärosätet: Linköpings universitet

Sök utanför SwePub

Sök vidare i:: Google; Google Book Search; Google Scholar

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

LIBRIS.kb.se