Exhaustive characterization of modified Si vacancies in 4H-SiC

↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Sökning: WFRF:(Ivády Viktor) > Exhaustive characte...

LIBRIS Formathandbok (Information om MARC21)

Fältnamn	Indikatorer	Metadata
000		04065naa a2200397 4500
001		oai:DiVA.org:liu-188417
003		SwePub
008		220914s2022 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1884172 URI
024	7	a https://doi.org/10.1515/nanoph-2022-04002 DOI
040		a (SwePub)liu
041		a engb eng
042		9 SwePub
072	7	a ref2 swepub-contenttype
072	7	a art2 swepub-publicationtype
100	1	a Davidsson, Joel,d 1989-u Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten4 aut0 (Swepub:liu)joeda01
245	1 0	a Exhaustive characterization of modified Si vacancies in 4H-SiC
264		c 2022-09-05
264	1	b Walter de Gruyter,c 2022
338		a electronic2 rdacarrier
500		a Funding Agencies\|Knut and Alice Wallenberg Foundation through WBSQD2 project [2018.0071]; Swedish Government Strategic Research Area Swedish e-science Research Centre (SeRC); Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [2009 00971]; Covid-19 SeRC transition grant; Swedish Research Council (VR) [2020-05402]; Swedish National Infrastructure for Computing (SNIC); Swedish Research Council [2018-05973]
520		a The negatively charged silicon vacancy (V-Si(-)) in silicon carbide is a well-studied point defect for quantum applications. At the same time, a closer inspection of ensemble photoluminescence and electron paramagnetic resonance measurements reveals an abundance of related but so far unidentified signals. In this study, we search for defects in 4H-SiC that explain the above magneto-optical signals in a defect database generated by automatic defect analysis and qualification (ADAQ) workflows. This search reveals only one class of atomic structures that exhibit silicon-vacancy-like properties in the data: a carbon anti-site (C-Si) within sub-nanometer distances from the silicon vacancy only slightly alters the latter without affecting the charge or spin state. Such a perturbation is energetically bound. We consider the formation of V-Si(-) + C-Si; up to 2 nm distance and report their zero phonon lines and zero field splitting values. In addition, we perform high-resolution photoluminescence experiments in the silicon vacancy region and find an abundance of lines. Comparing our computational and experimental results, several configurations show great agreement. Our work demonstrates the effectiveness of a database with high-throughput results in the search for defects in quantum applications.
650	7	a NATURVETENSKAPx Fysikx Annan fysik0 (SwePub)103992 hsv//swe
650	7	a NATURAL SCIENCESx Physical Sciencesx Other Physics Topics0 (SwePub)103992 hsv//eng
653		a high-throughput; photoluminescence; point defects; SiC; silicon vacancy
700	1	a Babar, Rohitu Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten4 aut0 (Swepub:liu)rohba86
700	1	a Shafizadeh, Danialu Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)dansh92
700	1	a Ivanov, Ivan Gueorguiev,d 1955-u Linköpings universitet,Halvledarmaterial,Tekniska fakulteten4 aut0 (Swepub:liu)ivaiv28
700	1	a Ivády, Viktor,d 1986-u Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Max Planck Inst Phys komplexer Syst, Germany4 aut0 (Swepub:liu)vikiv58
700	1	a Armiento, Rickard,d 1976-u Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten4 aut0 (Swepub:liu)ricar47
700	1	a Abrikosov, Igor A.,c Professor,d 1965-u Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten4 aut0 (Swepub:liu)igoab43
710	2	a Linköpings universitetb Teoretisk Fysik4 org
773	0	t Nanophotonicsd : Walter de Gruyterg 11:20, s. 4565-4580q 11:20<4565-4580x 2192-8606x 2192-8614
856	4	u https://liu.diva-portal.org/smash/get/diva2:1695494/FULLTEXT01.pdfx primaryx Raw objecty fulltext:print
856	4 8	u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-188417
856	4 8	u https://doi.org/10.1515/nanoph-2022-0400

Hitta via bibliotek

Nanophotonics (Sök värdpublikationen i LIBRIS)

Till lärosätets databas

Hitta mer i SwePub

Av författaren/redakt...: Davidsson, Joel, ...; Babar, Rohit; Shafizadeh, Dani ...; Ivanov, Ivan Gue ...; Ivády, Viktor, 1 ...; Armiento, Rickar ...; visa fler...; Abrikosov, Igor ...; visa färre...

Om ämnet

NATURVETENSKAP: NATURVETENSKAP; och Fysik; och Annan fysik

Artiklar i publikationen: Nanophotonics

Av lärosätet: Linköpings universitet

Sök utanför SwePub

Sök vidare i:: Google; Google Book Search; Google Scholar

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

LIBRIS.kb.se