Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC

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Fältnamn	Indikatorer	Metadata
000		03252naa a2200349 4500
001		oai:lup.lub.lu.se:b920a432-aa22-4a0f-87d9-36f117956c5f
003		SwePub
008		180215s2018 \| \|\|\|\|\|\|\|\|\|\|\|000 \|\|eng\|
024	7	a https://lup.lub.lu.se/record/b920a432-aa22-4a0f-87d9-36f117956c5f2 URI
024	7	a https://doi.org/10.1134/S10637826180201852 DOI
040		a (SwePub)lu
041		a engb eng
042		9 SwePub
072	7	a art2 swepub-publicationtype
072	7	a ref2 swepub-contenttype
100	1	a Solovan, M. N.u Yurii Fedkovych Chernivtsi National University4 aut
245	1 0	a Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC
264	1	c 2018
300		a 6 s.
520		a Graphite/p-SiC Schottky diodes are fabricated using the recently suggested technique of transferring drawn graphite films onto p-SiC single-crystal substrates. The current–voltage and capacitance–voltage characteristics are measured at different temperatures and at different frequencies of a small-signal AC signal, respectively. The temperature dependences of the potential-barrier height and of the series resistance of the graphite/p-SiC junctions are measured and analyzed. The dominant mechanisms of the charge–carrier transport through the diodes are determined. It is shown that the dominant mechanisms of the transport of charge carriers through the graphite/p-Si Schottky diodes at a forward bias are multi-step tunneling recombination and tunneling described by the Newman formula (at high bias voltages). At reverse biases, the dominant mechanisms of charge transport are the Frenkel–Poole emission and tunneling. It is shown that the graphite/p-SiC Schottky diodes can be used as detectors of ultraviolet radiation since they have the open-circuit voltage Voc = 1.84 V and the short-circuit current density Isc = 2.9 mA/cm2 under illumination from a DRL 250-3 mercury–quartz lamp located 3 cm from the sample.
650	7	a TEKNIK OCH TEKNOLOGIERx Maskinteknikx Energiteknik0 (SwePub)203042 hsv//swe
650	7	a ENGINEERING AND TECHNOLOGYx Mechanical Engineeringx Energy Engineering0 (SwePub)203042 hsv//eng
700	1	a Andrushchak, G. O.u Yurii Fedkovych Chernivtsi National University4 aut
700	1	a Mostovyi, A. I.u Lund University,Lunds universitet,Kemisk fysik,Enheten för fysikalisk och teoretisk kemi,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Chemical Physics,Physical and theoretical chemistry,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH,Yurii Fedkovych Chernivtsi National University4 aut0 (Swepub:lu)an3125mo
700	1	a Kovaliuk, T. T.u Yurii Fedkovych Chernivtsi National University4 aut
700	1	a Brus, V. V.u Helmholtz Association of German Research Centers4 aut
700	1	a Maryanchuk, P. D.u Yurii Fedkovych Chernivtsi National University4 aut
710	2	a Yurii Fedkovych Chernivtsi National Universityb Kemisk fysik4 org
773	0	t Semiconductorsg 52:2, s. 236-241q 52:2<236-241x 1063-7826
856	4	u http://dx.doi.org/10.1134/S1063782618020185y FULLTEXT
856	4 8	u https://lup.lub.lu.se/record/b920a432-aa22-4a0f-87d9-36f117956c5f
856	4 8	u https://doi.org/10.1134/S1063782618020185

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Av författaren/redakt...: Solovan, M. N.; Andrushchak, G. ...; Mostovyi, A. I.; Kovaliuk, T. T.; Brus, V. V.; Maryanchuk, P. D ...

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TEKNIK OCH TEKNOLOGIER: TEKNIK OCH TEKNO ...; och Maskinteknik; och Energiteknik

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Av lärosätet: Lunds universitet

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