Search: (WFRF:(Paskova Tanja 1961 ))
> (2001) >
Internal structure ...
Internal structure of free excitons in GaN
-
- Paskov, Plamen, 1959- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
- Paskova, Tanja, 1961- (author)
- Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
-
- Holtz, Per-Olof, 1951- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
show more...
-
- Monemar, Bo, 1942- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
-
show less...
-
(creator_code:org_t)
- 2001
- 2001
- English.
-
In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 228:2, s. 467-470
- Related links:
-
https://urn.kb.se/re...
-
show more...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the a-plane sapphire, splitting of the A and B excitons induced by the uniaxial in-plane stress is also observed.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database