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Internal structure of free excitons in GaN

Paskov, Plamen, 1959- (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
Paskova, Tanja, 1961- (author)
Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi
Holtz, Per-Olof, 1951- (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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Monemar, Bo, 1942- (author)
Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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 (creator_code:org_t)
2001
2001
English.
In: Physica status solidi. B, Basic research. - 0370-1972 .- 1521-3951. ; 228:2, s. 467-470
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the a-plane sapphire, splitting of the A and B excitons induced by the uniaxial in-plane stress is also observed.

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NATURAL SCIENCES
NATURVETENSKAP

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