L773:0038 1101 OR L773:1879 2405
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A novel UMOS capacitor test structure for SiC devices
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- Zetterling, Carl-Mikael (author)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (author)
- KTH,Integrerade komponenter och kretsar
- (creator_code:org_t)
- 1996
- 1996
- English.
- In: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 39:9, s. 1396-1397
- Journal article (peer-reviewed)
Abstract
Subject headings
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- In this paper we propose the use of U-grooved MOS capacitors to investigate oxides intended for U-grooved MOSFETs and IGBTs in silicon carbide. The UMOS capacitor uses only two mask layers, and has vertically etched walls and a gate contact that overlaps the step. We have manufactured UMOS capacitors in n-type 6H SiC with dry thermal gate oxides, and compared the capacitance voltage characteristics to those of flat reference capacitors. It was found that the general appearance of capacitance-voltage curves was unchanged by the addition of the vertical grooves, although the leakage through the oxide was increased. The oxide thickness on the sidewalls was approximately the same as on the flat parts of the devices. Copyright © 1996 Elsevier Science Ltd.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- Bipolar transistors
- Capacitance
- Capacitors
- Electric contacts
- Gates (transistor)
- Oxides
- Reactive ion etching
- Semiconducting films
- Semiconductor device manufacture
- Semiconductor device structures
- Silicon carbide
- Silicon nitride
- Capacitance voltage characteristics
- Insulated gate bipolar transistors
- Mask layers
- Oxide thickness
- Thermal gate oxides
- U grooved MOS capacitors
- MOSFET devices
Publication and Content Type
- ref (subject category)
- art (subject category)
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