Phosphorus and boron diffusion in silicon under equilibrium conditions

• The intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 degreesC) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74+/-0.07 eV and a pre-exponential factor of (8+/-5)x10(-4) cm(2)/s. In the temperature range of 810 to 1050 degreesC, boron was found to diffuse with an activation energy of 3.12+/-0.04 eV and a pre-exponential factor of 0.06+/-0.02 cm(2)/s. These results differ from those of many previous studies, but this deviation may to a large extent be attributed to slow transients before equilibrium concentrations of point defects are established at temperatures below similar to1000 degreesC. Despite a similar diffusion mechanism mediated by Si self-interstitials, P exhibits a lower activation energy than B because of stronger bonding to the Si self-interstitial.

Nyckelord

point-defects

surface

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ref (ämneskategori)

art (ämneskategori)