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Improvement of ZnO ...
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Khranovskyy, V.Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine, Linkoping University, Department of Physics, Chemistry and Biology, SE-58183 Linkoping, Sweden
(författare)
Improvement of ZnO thin film properties by application of ZnO buffer layers
- Artikel/kapitelEngelska2007
Förlag, utgivningsår, omfång ...
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Elsevier BV,2007
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:liu-48355
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-48355URI
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https://doi.org/10.1016/j.jcrysgro.2007.06.034DOI
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Språk:engelska
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Sammanfattning på:engelska
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Klassifikation
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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The effect of ZnO buffer layers prepared at different temperatures on the structural, optical and morphological properties of the ZnO main layer is reported. ZnO thin films (comprising a buffer and a main layer) were deposited on (0 0 0 1) c-sapphire substrates by PEMOCVD. Two-step growth regimes were applied to realize a homoepitaxial growth on ZnO buffers: low-temperature ZnO buffer layer deposited at Ts=300 °C and the main layer at Ts=500 °C, high-temperature ZnO buffer layer deposited at Ts=500 °C and the main layer at Ts=300 °C. For comparison, a sample grown at high-temperature Ts=500 °C by one-step procedure was used. The low-temperature buffer layer has shown the most beneficial effect on the structural and morphological properties, as expressed by the narrowing of the (0 0 2) diffraction peak (FWHM=0.07°) and crystallite size enlargement. However, the surface roughness of this sample is higher then that of the sample grown by one-step procedure and this needs further considerations. The photoluminescence results seem to support a conclusion that the application of a low-temperature buffer layer among the studied temperature regimes is the most advantageous. © 2007 Elsevier B.V. All rights reserved.
Ämnesord och genrebeteckningar
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A1. ZnO PEMOCVD
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B1. LT ZnO buffer layer
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B2. Structural quality
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NATURAL SCIENCES
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NATURVETENSKAP
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Minikayev, R.Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
(författare)
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Trushkin, S.Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
(författare)
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Lashkarev, G.Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine
(författare)
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Lazorenko, V.Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine
(författare)
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Grossner, U.University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway
(författare)
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Paszkowicz, W.Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
(författare)
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Suchocki, A.Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
(författare)
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Svensson, B.G.University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway
(författare)
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Yakimova, RositsaLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)rosia15
(författare)
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Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine, Linkoping University, Department of Physics, Chemistry and Biology, SE-58183 Linkoping, SwedenInstitute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Journal of Crystal Growth: Elsevier BV308:1, s. 93-980022-02481873-5002
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Till lärosätets databas
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Khranovskyy, V.
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Minikayev, R.
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Trushkin, S.
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Lashkarev, G.
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Lazorenko, V.
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Grossner, U.
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visa fler...
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Paszkowicz, W.
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Suchocki, A.
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Svensson, B.G.
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Yakimova, Rosits ...
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visa färre...
- Artiklar i publikationen
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Journal of Cryst ...
- Av lärosätet
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Linköpings universitet