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Improvement of ZnO ...
Improvement of ZnO thin film properties by application of ZnO buffer layers
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- Khranovskyy, V. (författare)
- Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine, Linkoping University, Department of Physics, Chemistry and Biology, SE-58183 Linkoping, Sweden
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- Minikayev, R. (författare)
- Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
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- Trushkin, S. (författare)
- Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
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- Lashkarev, G. (författare)
- Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine
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- Lazorenko, V. (författare)
- Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine
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- Grossner, U. (författare)
- University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway
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- Paszkowicz, W. (författare)
- Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
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- Suchocki, A. (författare)
- Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland
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- Svensson, B.G. (författare)
- University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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Institute for Problems of Material Science, Krzhyzhanovskyy Str 3, 03630 Kyiv, Ukraine, Linkoping University, Department of Physics, Chemistry and Biology, SE-58183 Linkoping, Sweden Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland (creator_code:org_t)
- Elsevier BV, 2007
- 2007
- Engelska.
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 308:1, s. 93-98
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The effect of ZnO buffer layers prepared at different temperatures on the structural, optical and morphological properties of the ZnO main layer is reported. ZnO thin films (comprising a buffer and a main layer) were deposited on (0 0 0 1) c-sapphire substrates by PEMOCVD. Two-step growth regimes were applied to realize a homoepitaxial growth on ZnO buffers: low-temperature ZnO buffer layer deposited at Ts=300 °C and the main layer at Ts=500 °C, high-temperature ZnO buffer layer deposited at Ts=500 °C and the main layer at Ts=300 °C. For comparison, a sample grown at high-temperature Ts=500 °C by one-step procedure was used. The low-temperature buffer layer has shown the most beneficial effect on the structural and morphological properties, as expressed by the narrowing of the (0 0 2) diffraction peak (FWHM=0.07°) and crystallite size enlargement. However, the surface roughness of this sample is higher then that of the sample grown by one-step procedure and this needs further considerations. The photoluminescence results seem to support a conclusion that the application of a low-temperature buffer layer among the studied temperature regimes is the most advantageous. © 2007 Elsevier B.V. All rights reserved.
Nyckelord
- A1. ZnO PEMOCVD
- B1. LT ZnO buffer layer
- B2. Structural quality
- NATURAL SCIENCES
- NATURVETENSKAP
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Khranovskyy, V.
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Minikayev, R.
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Trushkin, S.
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Lashkarev, G.
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Lazorenko, V.
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Grossner, U.
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Paszkowicz, W.
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Suchocki, A.
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Svensson, B.G.
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Yakimova, Rosits ...
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Journal of Cryst ...
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Linköpings universitet