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LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003866naa a2200421 4500
001oai:DiVA.org:liu-48355
003SwePub
008091011s2007 | |||||||||||000 ||eng|
0247 a https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-483552 URI
0247 a https://doi.org/10.1016/j.jcrysgro.2007.06.0342 DOI
040 a (SwePub)liu
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
1001 a Khranovskyy, V.u Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine, Linkoping University, Department of Physics, Chemistry and Biology, SE-58183 Linkoping, Sweden4 aut
2451 0a Improvement of ZnO thin film properties by application of ZnO buffer layers
264 1b Elsevier BV,c 2007
338 a print2 rdacarrier
520 a The effect of ZnO buffer layers prepared at different temperatures on the structural, optical and morphological properties of the ZnO main layer is reported. ZnO thin films (comprising a buffer and a main layer) were deposited on (0 0 0 1) c-sapphire substrates by PEMOCVD. Two-step growth regimes were applied to realize a homoepitaxial growth on ZnO buffers: low-temperature ZnO buffer layer deposited at Ts=300 °C and the main layer at Ts=500 °C, high-temperature ZnO buffer layer deposited at Ts=500 °C and the main layer at Ts=300 °C. For comparison, a sample grown at high-temperature Ts=500 °C by one-step procedure was used. The low-temperature buffer layer has shown the most beneficial effect on the structural and morphological properties, as expressed by the narrowing of the (0 0 2) diffraction peak (FWHM=0.07°) and crystallite size enlargement. However, the surface roughness of this sample is higher then that of the sample grown by one-step procedure and this needs further considerations. The photoluminescence results seem to support a conclusion that the application of a low-temperature buffer layer among the studied temperature regimes is the most advantageous. © 2007 Elsevier B.V. All rights reserved.
653 a A1. ZnO PEMOCVD
653 a B1. LT ZnO buffer layer
653 a B2. Structural quality
653 a NATURAL SCIENCES
653 a NATURVETENSKAP
7001 a Minikayev, R.u Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland4 aut
7001 a Trushkin, S.u Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland4 aut
7001 a Lashkarev, G.u Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine4 aut
7001 a Lazorenko, V.u Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine4 aut
7001 a Grossner, U.u University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway4 aut
7001 a Paszkowicz, W.u Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland4 aut
7001 a Suchocki, A.u Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland4 aut
7001 a Svensson, B.G.u University of Oslo, Physics Department, Centre for Materials Science and Nanotechnology, N-0316 Oslo, Norway4 aut
7001 a Yakimova, Rositsau Linköpings universitet,Halvledarmaterial,Tekniska högskolan4 aut0 (Swepub:liu)rosia15
7102 a Institute for Problems of Material Science, Krzhyzhanovskyy Str. 3, 03630 Kyiv, Ukraine, Linkoping University, Department of Physics, Chemistry and Biology, SE-58183 Linkoping, Swedenb Institute of Physics, P.A.S., Al. Lotników 32/46, 02-668 Warsaw, Poland4 org
7730 t Journal of Crystal Growthd : Elsevier BVg 308:1, s. 93-98q 308:1<93-98x 0022-0248x 1873-5002
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-48355
8564 8u https://doi.org/10.1016/j.jcrysgro.2007.06.034

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