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Spatial variarion of hole eigen energies in Ge/Si quantum wells
- Kaniewska, M. (author)
-
- Engström, Olof, 1943 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
-
- Karmous, A. (author)
- Universität Stuttgart,University of Stuttgart
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- Zaremba, G (author)
- Kaczmarczyk, M (author)
- Wzorek, M (author)
- Czerwinsky, A (author)
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- (creator_code:org_t)
- ISBN 9780735410022
- AIP, 2011
- 2011
- English.
- In: AIP Conference Proceedings. - : AIP. - 1551-7616 .- 0094-243X. - 9780735410022 ; 1399, s. 293-294
- Conference paper (peer-reviewed)
Abstract
Subject headings
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- Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p +-(001) Si substrates at a growth temperature of 550°C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission may be imposed by a lateral quantum confinement effect. Results of a study by HRTEM methods demonstrate pronounced fluctuations of the QW thickness and variations of the strain field in the QW.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Annan teknik -- Övrig annan teknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)
Keyword
- Ge/Si
- DLTS
- MBE
- QWs
- HRTEM
Publication and Content Type
- kon (subject category)
- ref (subject category)
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- Zaremba, G
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- Wzorek, M
- Czerwinsky, A
- Surma, B
- Wnuk, A
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