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LIBRIS Formathandbok  (Information om MARC21)
FältnamnIndikatorerMetadata
00003309naa a2200361 4500
001oai:DiVA.org:hig-23227
003SwePub
008170105s1998 | |||||||||||000 ||eng|
024a https://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-232272 URI
024a https://doi.org/10.1007/s1005100504152 DOI
040 a (SwePub)hig
041 a engb eng
042 9 SwePub
072 7a ref2 swepub-contenttype
072 7a art2 swepub-publicationtype
100a Rönnow, Danielu Max Planck Institut für Festkörperforschung, Stuttgart, Germany4 aut0 (Swepub:hig)dalrow
2451 0a Isotope effects on the electronic critical points of germanium :b Ellipsometric investigation of the E1 and E1+ Delta(1) transitions
264 1b Springer Science and Business Media LLC,c 1998
338 a print2 rdacarrier
520 a Within the past years the optical excitations of electrons have been measured for semiconductor samples of different isotope compositions. The isotope shift observed have been compared with calculations of the effects of electron-phonon interaction on the electronic band structure. While qualitative agreement has been obtained, some discrepancies remain especially concerning the E1 and E1 + Delta(1) transitions. We have remeasured the effect of isotope mass on the E1 and E1 + Delta(1) transitions of germanium with several isotopic compositions. The results, obtained by means of spectroscopic ellipsometry, confirm that the real part of the gap self-energies induced by electron-phonon interaction is larger than found from band structure calculations, while the imaginary part agrees with those calculations, which are based on a pseudopotential band structure and a bond charge model for the lattice dynamics. Our results agree with predictions based on the measured temperature dependence of the gaps. We compare our data for E1 and E1 + Delta(1) with results for the lowest direct (E0) and indirect (E9) gaps. The measured values of Δ0 and Δ1 increase noticeably with increasing isotope mass. Similar effects have been observed in the temperature dependence of Delta(1) in alpha-Sn and GaSb. A microscopic explanation for this effect is not available.
650 7a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe
650 7a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng
650 7a NATURVETENSKAPx Fysik0 (SwePub)1032 hsv//swe
650 7a NATURAL SCIENCESx Physical Sciences0 (SwePub)1032 hsv//eng
653 a Electron energy levels; Electronic structure; Electrons; Ellipsometry; Energy gap; Isotopes; Phonons
653 a Isotope effects
653 a Semiconducting germanium
700a Lastras-Martí­nez, L. F.u Max Planck Institut für Festkörperforschung, Stuttgart, Germany4 aut
700a Cardona, M.u Max Planck Institut für Festkörperforschung, Stuttgart, Germany4 aut
710a Max Planck Institut für Festkörperforschung, Stuttgart, Germany4 org
773t European Physical Journal Bd : Springer Science and Business Media LLCg 5:1, s. 29-35q 5:1<29-35x 1434-6028x 1434-6036
8564 8u https://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-23227
8564 8u https://doi.org/10.1007/s100510050415

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