Sökning: WFRF:(Moschetti Giuseppe) > A 300-mu W Cryogeni...
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000 | 04071naa a2200529 4500 | |
001 | oai:research.chalmers.se:c963030c-3d29-473b-ba59-593940eb060e | |
003 | SwePub | |
008 | 210429s2020 | |||||||||||000 ||eng| | |
009 | oai:research.chalmers.se:1aa6ac44-2c96-4511-84f6-ce8a71ec5468 | |
024 | 7 | a https://research.chalmers.se/publication/5235992 URI |
024 | 7 | a https://doi.org/10.1109/IMS30576.2020.92238652 DOI |
024 | 7 | a https://research.chalmers.se/publication/5201842 URI |
024 | 7 | a https://research.chalmers.se/publication/5212962 URI |
040 | a (SwePub)cth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a kon2 swepub-publicationtype |
072 | 7 | a ref2 swepub-contenttype |
100 | 1 | a Cha, Eunjung,d 1985u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)eunjung |
245 | 1 0 | a A 300-mu W Cryogenic HEMT LNA for Quantum Computing |
264 | 1 | c 2020 |
520 | a This paper reports on ultra-low power 4-8 GHz (C-band) InP high-electron mobility transistor (HEMT) cryogenic low-noise amplifiers (LNAs) aimed for qubit amplification in quantum computing. We have investigated dc power dissipation in hybrid three-stage cryogenic LNAs using 100-nm gate length InP HEMTs with different indium content in the channel (65% and 80%). The noise performance at 300 K was found to be comparable for both channel structures. At 5 K, an LNA with 65% indium channel exhibited significantly lower noise temperature at any dc power dissipation compared to the LNA with 80% indium channel. The LNA with 65% indium channel achieved an average noise of 3.2 K with 23 dB gain at an ultra-low power consumption of 300 mu W. To the best of authors' knowledge, the LNA exhibited the lowest noise temperature to date for sub-milliwatt power cryogenic C-band LNAs. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Telekommunikation0 (SwePub)202042 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Telecommunications0 (SwePub)202042 hsv//eng |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Signalbehandling0 (SwePub)202052 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Signal Processing0 (SwePub)202052 hsv//eng |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronikx Annan elektroteknik och elektronik0 (SwePub)202992 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineeringx Other Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)202992 hsv//eng |
650 | 7 | a NATURVETENSKAPx Data- och informationsvetenskapx Systemvetenskap, informationssystem och informatik0 (SwePub)102022 hsv//swe |
650 | 7 | a NATURAL SCIENCESx Computer and Information Sciencesx Information Systems0 (SwePub)102022 hsv//eng |
653 | a Cryogenic | |
653 | a quantum computing | |
653 | a noise | |
653 | a high-electron-mobility transistors (HEMT5) | |
653 | a C-band | |
653 | a low-noise amplifiers (LNAs) | |
700 | 1 | a Wadefalk, Niklas,d 19734 aut0 (Swepub:cth)wadefalk |
700 | 1 | a Moschetti, Giuseppe,d 1982u Qamcom Research And Technology AB4 aut0 (Swepub:cth)giumos |
700 | 1 | a Pourkabirian, Arsalan,d 19834 aut0 (Swepub:cth)pourkabi |
700 | 1 | a Stenarson, Jörgen,d 19724 aut0 (Swepub:cth)sjorgen |
700 | 1 | a Grahn, Jan,d 1962u Chalmers tekniska högskola,Chalmers University of Technology4 aut0 (Swepub:cth)jagr |
710 | 2 | a Chalmers tekniska högskolab Qamcom Research And Technology AB4 org |
773 | 0 | t PROCEEDINGS OF THE 2020 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)g , s. 1299-1302q <1299-1302x 0149-645Xx 2576-7216z 9781728168159 |
856 | 4 8 | u https://research.chalmers.se/publication/523599 |
856 | 4 8 | u https://doi.org/10.1109/IMS30576.2020.9223865 |
856 | 4 8 | u https://research.chalmers.se/publication/520184 |
856 | 4 8 | u https://research.chalmers.se/publication/521296 |
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