Theory of a room-temperature silicon quantum dot device as a sensitive electrometer

Jeppson, Kjell,1947Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Chalmers tekniska högskola,Chalmers University of Technology,University of Göteborg and Chalmers University of Technology,Physical Electron. Photonics Group, University of Göteborg, Chalmers University of Technology, S-412 96 Göteborg, Sweden,Solid State Electronics Group, Department of Microelectronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden (författare)

We consider theoretically the use of a room-temperature silicon quantum dot based device for electrometer applications. The low power device includes two split gates that quantize the electronic energy levels in the emitter and collector regions. The base consists of a silicon quantum dot buried in silicon dioxide. The small size of the dotand quantization of the states in the leads combined to allow the device to operate at room temperature. The nonlinear current-voltage characteristics can be significantly altered by small changes to the potential of the split gates. Power dissipation in the device therefore changes with the split gate voltage, and this can be exploited in electrometerapplications. A simple model of the power dissipated when the device is part of a microwave resonant inductor-resistor-capacitor tank circuit suggests that large changes indevice power can be achieved by changing the gate voltage, thereby forming a measurable signal. We also demonstrate that the power dissipation in the device changes as the base width is varied, and that the current through the device increases exponentially with a decrease in base width. (©2004 American Institute of Physics)

Narayan, V.Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),Chalmers tekniska högskola,Chalmers University of Technology,University of Gothenburg,University of Göteborg and Chalmers University of Technology,Physical Electron. Photonics Group, University of Göteborg, Chalmers University of Technology, S-412 96 Göteborg, Sweden (författare)
Pettersson, Håkan,1962-Högskolan i Halmstad,Halmstad Embedded and Intelligent Systems Research (EIS),Halmstad University(Swepub:hh)hape (författare)
Willander, Magnus,1948Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Chalmers tekniska högskola,Chalmers University of Technology,University of Göteborg and Chalmers University of Technology,Physical Electron. Photonics Group, University of Göteborg, Chalmers University of Technology, S-412 96 Göteborg, Sweden(Swepub:liu)magwi72 (författare)
Jeppson, K.Solid State Electronics Group, Department of Microelectronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden (författare)
Bengtsson, Lars,1958Department of Computer Engineering, Sch. of Electrical and Comp. Eng., Chalmers University of Technology, S-412 96 Göteborg, Sweden,Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)labe (författare)
Göteborgs universitetInstitutionen för fysik (GU) (creator_code:org_t)

Ingår i:Journal of Applied PhysicsMelville, NY : American Institute of Physics (AIP)95:1, s. 323-3260021-89791089-7550

Av författaren/redakt...: Jeppson, Kjell, ...; Narayan, V.; Pettersson, Håka ...; Willander, Magnu ...; Jeppson, K.; Bengtsson, Lars, ...

Om ämnet

Av lärosätet: Högskolan i Halmstad; Göteborgs universitet; Chalmers tekniska högskola; Linköpings universitet

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