WFRF:(Robert G.)
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GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance
- Krishnamurthi, Kathiravan (author)
-
- Nilsen, Svein M., 1956 (author)
- Chalmers tekniska högskola,Chalmers University of Technology
- Harrison, Robert G. (author)
- (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 1994
- 1994
- English.
- In: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 42:12, s. 2512-2516
- Journal article (peer-reviewed)
Abstract
Subject headings
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- Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al0.4Ga0.6As barrier, and using In0.2Ga0.8As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely reactive multiplication, without the output-power saturation both predicted and observed in triplers using leaky-barrier SBVs.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Keyword
- QBV
- varactors
- HBV
- SBV
Publication and Content Type
- art (subject category)
- ref (subject category)
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