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SRAM Gauge : SRAM Health Monitoring via Cells Race
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- Rohbani, Nezam (author)
- Inst Res Fundamental Sci IPM, Sch Comp Sci, Tehran, Iran.
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- Ebrahimi, Masoumeh (author)
- KTH,Elektronik och inbyggda system
- Inst Res Fundamental Sci IPM, Sch Comp Sci, Tehran, Iran Elektronik och inbyggda system (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2021
- 2021
- English.
- In: 2021 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED). - : Institute of Electrical and Electronics Engineers (IEEE).
- Conference paper (peer-reviewed)
Abstract
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- By shrinking transistors' dimensions and, consequently, reducing the operating voltage in nano-scale CMOS technologies, the stability of SRAM cells has become a major reliability concern. SRAM cells' robustness against undesirable bit-flips is commonly measured by Static Noise Margin (SNM). Degradation in SNM is mainly because of the gradual variations in transistors' parameters due to aging. This work proposes a built-in SRAM health sensor capable of monitoring the SNM of individual SRAM cells in a memory block. The sensor is composed of extra non-operational sensor cells with different predefined SNMs. These sensor cells are put in a race with operational SRAM cells to determine their strength. The precision, sensing range, and robustness of the proposed sensor against process variation are adjustable at the cost of small area overhead. In our simulation setup, with the area overhead of 0.29%, the sensor monitors a wide range of SNMs from 275 mV to 325 mV, with a precision of 5 mV.
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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